FQB8N60C datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A
* Low Gate Charge (Typ. 28 nC)
* Low Crss (Typ. 12 pF)
* 100% Avalanche Tested
* RoHS.

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switc.

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